FTIR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings

Silicon nitride (Si3N4) due to its good mechanical and electrical properties is a promising material for wide range of applications, including exploitation under action of ionizing radiation. For estimating the changes of chemical bonds in silicon nitride nanolayers under action of ionizing radiatio...

Full description

Saved in:
Bibliographic Details
Published inKey engineering materials Vol. 788; pp. 96 - 101
Main Authors Romanova, Marina, Zaslavskis, Aleksandrs, Kizane, Gunta, Zariņš, Artūrs, Avotina, Liga, Dekhtyar, Yuri, Enichek, Gennady, Pajuste, Elina, Kinerte, Valentina, Lescinskis, Bronislavs
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.11.2018
Subjects
Fourier transforms
Multilayers
Silicon nitride
Silicon Nitride
Accelerated Electrons
Infrared Spectrometry
Online AccessGet full text

Cover

More Information
Summary:Silicon nitride (Si3N4) due to its good mechanical and electrical properties is a promising material for wide range of applications, including exploitation under action of ionizing radiation. For estimating the changes of chemical bonds in silicon nitride nanolayers under action of ionizing radiation single and multi-layer silicon nitride nanolayered coatings on prepared Si subtrate were investigated by means of Fourier transform infrared spectrometry. Three main groups of signals were identified in both types of nanolayers, at 510 and 820 cm-1 and group of broad signals at 1000-1200 cm-1. Irradiation with accelerated electrons up to absorbed doses 36 MGy causes minor changes of signal intensities and position in spectra, showing to good radiation stability of the single and multi layered Si3N4 nanolayers.
Bibliography:Selected, peer-reviewed papers presented at the 8th International Conference on Silicate Materials “BaltSilica 2018”, May 30 – June 1, 2018, Riga, Latvia
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.788.96