New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method

The present research was focused on the effect of porous graphite plate in TaC-coated crucible on crystal quality and resistivity of semi-insulating SiC crystals. Two SiC crystals grown with/without porous graphite plate in TaC-coated crucible were systematically compared. 6H-SiC polytype was obtain...

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Bibliographic Details
Published inMaterials science forum Vol. 963; pp. 46 - 50
Main Authors Park, Mi Seon, Fan, Wei, Kim, Dae Sung, Xu, Xian Gang, Lee, Chae Young, Jang, Yeon Suk, Chen, Xiu Fang, Lee, Won Jae, Choi, Jeong Min, Qu, Hao
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 19.07.2019
Subjects
Crucibles
Crystal growth
Crystals
Electrical resistivity
Graphite
Single crystals
Physical Vapor Transport (PVT)
Semi-Insulating Crystal Growth
Crystal Quality
Porous Graphite
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Summary:The present research was focused on the effect of porous graphite plate in TaC-coated crucible on crystal quality and resistivity of semi-insulating SiC crystals. Two SiC crystals grown with/without porous graphite plate in TaC-coated crucible were systematically compared. 6H-SiC polytype was obtained on both crystals regardless of porous graphite plate. The quality of SiC crystal grown using porous graphite plate placed in the TaC-coated crucible was slightly better than SiC crystal without porous graphite plate. SiC crystals having an average resistivity value of about 1×1010 Ωcm were obtained. In the result of COREMA measurement, the use of porous graphite plate tends to obtain wafers with better uniformity in resistivity value.
Bibliography:Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.963.46