Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method

Two SiC crystals were grown using SiC source powder with different level of purity and then the effect of the purity of SiC source materials on the final electrical properties has been systematically observed. Furthermore, the variation of vanadium amount according to the growth direction of vanadiu...

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Bibliographic Details
Published inMaterials science forum Vol. 963; pp. 30 - 33
Main Authors Park, Mi Seon, Lee, Won Jae, Kim, Dae Sung, Kim, Tae Hee, Xu, Xian Gang, Lee, Chae Young, Yang, In Seok, Chen, Xiu Fang, Jang, Yeon Suk, Choi, Jeong Min
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 19.07.2019
Subjects
Crystal growth
Electrical properties
Electrical resistivity
Purity
Single crystals
Vanadium
Semi-Insulating Crystal
Vanadium Incorporation
Crystal Quality
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Summary:Two SiC crystals were grown using SiC source powder with different level of purity and then the effect of the purity of SiC source materials on the final electrical properties has been systematically observed. Furthermore, the variation of vanadium amount according to the growth direction of vanadium doped semi-insulated SiC single crystals has been investigated. The quality of SiC crystal grown using SiC source powder with higher purity was definitely better than SiC crystal with lower purity. SiC crystals having an average resistivity value of about 1×1010 Ωcm were successfully obtained. In the result of COREMA measurement, the use of high purity SiC powder was revealed to obtain wafers with better uniformity in resistivity value.
Bibliography:Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.963.30