Wide Bandgap Devices in Electric Vehicle Converters: A Performance Survey

This paper introduces a unique quantified study about using low-losses fast-switching wide bandgap (WBG) devices, i.e., gallium nitride (GaN) and silicon carbide (SiC), over traditional Silicon (Si) devices in the switching of dc/dc converters, focusing on electric vehicles' (EVs) machine drive...

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Published inCanadian journal of electrical and computer engineering Vol. 41; no. 1; pp. 45 - 54
Main Authors Abdelrahman, Ahmed S., Erdem, Zekiye, Attia, Yosra, Youssef, Mohamed Z.
Format Journal Article
LanguageEnglish
Published IEEE Canada 01.12.2018
Subjects
dc/dc converter
Electric vehicles (EVs)
Gallium nitride
gallium nitride (GaN) E-HEMT cascode
HEMTs
Silicon
Silicon carbide
silicon carbide (SiC) trench accumulation channel field effect transistor (ACCUFET)
Switches
Switching frequency
wide bandgap (WBG) devices
Online AccessGet full text
ISSN0840-8688
DOI10.1109/CJECE.2018.2807780

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Abstract This paper introduces a unique quantified study about using low-losses fast-switching wide bandgap (WBG) devices, i.e., gallium nitride (GaN) and silicon carbide (SiC), over traditional Silicon (Si) devices in the switching of dc/dc converters, focusing on electric vehicles' (EVs) machine drive and battery charger. A detailed model of the power train of a Nissan Leaf was developed in PSIM software, with WBG semiconductors' capability. The model was simulated one time using GaN semiconductors and another time using SiC devices. Simulation results are quantified and a comparison between different semiconductors in terms of total losses and efficiency is presented. The developed PSIM model can also be extended to other EVs like Chevy Volt. A proof of concept prototype for a Nissan Leaf dc/dc converter was built in the laboratory and results were collected. Componentwise experimental results are presented and their correlation with simulation findings is demonstrated. In addition, experimental results of the overall power train test bench are found to be matched with the simulation results on a system level as well.
AbstractList This paper introduces a unique quantified study about using low-losses fast-switching wide bandgap (WBG) devices, i.e., gallium nitride (GaN) and silicon carbide (SiC), over traditional Silicon (Si) devices in the switching of dc/dc converters, focusing on electric vehicles' (EVs) machine drive and battery charger. A detailed model of the power train of a Nissan Leaf was developed in PSIM software, with WBG semiconductors' capability. The model was simulated one time using GaN semiconductors and another time using SiC devices. Simulation results are quantified and a comparison between different semiconductors in terms of total losses and efficiency is presented. The developed PSIM model can also be extended to other EVs like Chevy Volt. A proof of concept prototype for a Nissan Leaf dc/dc converter was built in the laboratory and results were collected. Componentwise experimental results are presented and their correlation with simulation findings is demonstrated. In addition, experimental results of the overall power train test bench are found to be matched with the simulation results on a system level as well.
Author Attia, Yosra
Abdelrahman, Ahmed S.
Youssef, Mohamed Z.
Erdem, Zekiye
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  organization: Department of Electrical, Computer and Software Engineering, Power Electronics and Drives Applications Laboratory, School of Engineering and Applied Science, University of Ontario Institute of Technology, Oshawa, ON, Canada
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SubjectTerms dc/dc converter
Electric vehicles (EVs)
Gallium nitride
gallium nitride (GaN) E-HEMT cascode
HEMTs
Silicon
Silicon carbide
silicon carbide (SiC) trench accumulation channel field effect transistor (ACCUFET)
Switches
Switching frequency
wide bandgap (WBG) devices
Title Wide Bandgap Devices in Electric Vehicle Converters: A Performance Survey
URI https://ieeexplore.ieee.org/document/8341519
Volume 41
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