Wide Bandgap Devices in Electric Vehicle Converters: A Performance Survey

• Published in: Canadian journal of electrical and computer engineering Vol. 41; no. 1; pp. 45 - 54
• Main Authors: Abdelrahman, Ahmed S., Erdem, Zekiye, Attia, Yosra, Youssef, Mohamed Z.
• Format: Journal Article
• Language: English
• Published: IEEE Canada 01.12.2018
• Subjects: dc/dc converter; Electric vehicles (EVs); Gallium nitride; gallium nitride (GaN) E-HEMT cascode; HEMTs; Silicon; Silicon carbide; silicon carbide (SiC) trench accumulation channel field effect transistor (ACCUFET); Switches; Switching frequency; wide bandgap (WBG) devices
• ISSN: 0840-8688
• DOI: 10.1109/CJECE.2018.2807780

This paper introduces a unique quantified study about using low-losses fast-switching wide bandgap (WBG) devices, i.e., gallium nitride (GaN) and silicon carbide (SiC), over traditional Silicon (Si) devices in the switching of dc/dc converters, focusing on electric vehicles' (EVs) machine drive and battery charger. A detailed model of the power train of a Nissan Leaf was developed in PSIM software, with WBG semiconductors' capability. The model was simulated one time using GaN semiconductors and another time using SiC devices. Simulation results are quantified and a comparison between different semiconductors in terms of total losses and efficiency is presented. The developed PSIM model can also be extended to other EVs like Chevy Volt. A proof of concept prototype for a Nissan Leaf dc/dc converter was built in the laboratory and results were collected. Componentwise experimental results are presented and their correlation with simulation findings is demonstrated. In addition, experimental results of the overall power train test bench are found to be matched with the simulation results on a system level as well.