Bright visible luminescence from highly textured, transparent Dy3+ doped RF sputtered zinc oxide films

Doping of rare earth elements such as Dy3+ into ZnO lattice can modify the luminescence properties. Dy3+ ions exhibit emissions in the visible region. The preparation of Dy3+ doped ZnO films with bright visible luminescence is of importance for luminescent device applications. In this study, highly...

Full description

Saved in:
Bibliographic Details
Published inJournal of alloys and compounds Vol. 721; pp. 661 - 673
Main Authors Sreeja Sreedharan, R., Reshmi Krishnan, R., Sanal Kumar, G., Kavitha, V.S., Chalana, S.R., Jolly Bose, R., Suresh, S., Vinodkumar, R., Sudheer, S.K., Mahadevan Pillai, V.P.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 15.10.2017
Elsevier BV
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Doping of rare earth elements such as Dy3+ into ZnO lattice can modify the luminescence properties. Dy3+ ions exhibit emissions in the visible region. The preparation of Dy3+ doped ZnO films with bright visible luminescence is of importance for luminescent device applications. In this study, highly textured, c-axis oriented, transparent, luminescent Dy3+ doped ZnO films are prepared using RF magnetron sputtering. The structural, morphological, optical and luminescent properties of the as-deposited films are investigated as a function of Dy3+ doping concentration. The structural analysis of the films carried out using X-ray diffraction and micro-Raman studies reveal the formation of hexagonal wurtzite ZnO phase in the films. All the films present smooth surface morphology consisting of dense distribution of grains with well-defined grain boundaries. The elemental analysis carried out using energy dispersive X-ray (EDX) spectra confirms the incorporation of Dy3+ ions in the ZnO lattice. The high transmittance of Dy3+doped ZnO films in the visible range with a sharp absorption edge shows good optical quality of the films. The visible luminescence observed ∼580 nm in the Dy3+ doped ZnO films can be attributed to theF924→H1326 transition of Dy3+ ions, suggesting the suitability of these films for luminescent device applications. •Highly c-oriented transparent, luminescent Dy3+doped ZnO films are prepared.•Structural, morphological, optical and luminescent properties are studied.•Structural quality of the films is analyzed using XRD and Raman spectra.•Bright visible emission ∼580 nm due to F924→H1326 transition of Dy3+ ions is obtained.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2017.06.010