Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship

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Bibliographic Details
Published in	Semiconductor science and technology Vol. 3; no. 4; pp. 302 - 305
Main Authors	Rikken, G L J A, Wyder, P, Chamberlain, J M, Grimes, R T, Halliday, D P
Format	Journal Article
Language	English
Published	IOP Publishing 01.04.1988
Online Access	Get full text

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ISSN:	0268-1242 1361-6641
DOI:	10.1088/0268-1242/3/4/005