Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than /spl plusmn/1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 39; no. 6; pp. 956 - 959
Main Authors He, Qiurong, Feng, Milton
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Amplification
Amplifiers
Bandwidth
BiCMOS integrated circuits
Circuit optimization
Circuits
Direct current
Dissipation
Distributed amplifiers
Distributed parameter circuits
Gain
Germanium silicon alloys
Linearity
Low-noise amplifiers
Noise
Noise figure
Silicon germanides
Silicon germanium
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Summary:We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than /spl plusmn/1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.
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ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2004.827801