Non-〈111〉-oriented semiconductor nanowires: growth, properties, and applications

• Published in: Nanoscale Vol. 15; no. 7; pp. 332 - 35
• Main Authors: Yan, Xin, Liu, Yuqing, Zha, Chaofei, Zhang, Xia, Zhang, Yunyan, Ren, Xiaomin
• Format: Journal Article
• Language: English
• Published: England Royal Society of Chemistry 16.02.2023
• Subjects: Nanowires; Optoelectronic devices; Physical properties
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/d2nr06421a

In recent years, non-〈111〉-oriented semiconductor nanowires have attracted increasing interest in terms of fundamental research and promising applications due to their outstanding crystal quality and distinctive physical properties. Here, a comprehensive overview of recent advances in the study of non-〈111〉-oriented semiconductor nanowires is presented. We start by introducing various growth techniques for obtaining nanowires with certain orientations, for which the growth energetics and kinetics are discussed. Attention is then given to the physical properties of non-〈111〉 nanowires, as predicted by theoretical calculations or demonstrated experimentally. After that, we review the advantages and challenges of non-〈111〉 nanowires as building blocks for electronic and optoelectronic devices. Finally, we discuss the possible challenges and opportunities in the research field of non-〈111〉 semiconductor nanowires. This review paper provides an overview of the growth, properties, and applications of non-〈111〉-oriented semiconductor nanowires for future electronic and optoelectronic devices.