Effects of modulation frequency on the structure and electrical characteristics of μc-Si：H films prepared by pulsed VHF-PECVD

Modulation frequency and pulse duty cycle are two key parameters of pulsed VHF-PECVD technology. An experimental study on the mierocrystalline silicon materials prepared by pulsed VHF-PECVD technology in high deposition rate is presented. And combining the diagnosis of plasma process with optical em...

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Bibliographic Details
Published inOptoelectronics letters Vol. 5; no. 3; pp. 212 - 215
Main Author 王世锋 张晓丹 赵颖 魏长春 许盛之 孙建 耿新华
Format Journal Article
LanguageEnglish
Published Heidelberg Tianjin University of Technology 01.05.2009
Subjects
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
化学气相沉积技术
微观结构
甚高频等离子体增强化学气相沉积
电学特性
脉冲占空比
薄膜
调制频率
Pulse Period
High Deposition Rate
Modulation Frequency
Optical Emission Spectroscopy
Duty Ratio
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Summary:Modulation frequency and pulse duty cycle are two key parameters of pulsed VHF-PECVD technology. An experimental study on the mierocrystalline silicon materials prepared by pulsed VHF-PECVD technology in high deposition rate is presented. And combining the diagnosis of plasma process with optical emission spectroscopy （OES）, the dependence of microstructure and electrical properties of thin films on the pulse modulation frequency is discussed in detail.
Bibliography:12-1370/TN
TP23
TN304.055
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-009-8206-8