Characteristics of a polymer Mach-Zehnder electro-optic switch using side-coupled series-cascaded M microrings

Structure and design are proposed for a kind of novel polymer Mach-Zehnder electro-optic （EO） switch using side-coupled M series-cascaded EO microrings. Formulations are proposed to analyze its switching characteristics. The dependences of the device＇s performances on M are thoroughly analyzed and c...

Full description

Saved in:
Bibliographic Details
Published inOptoelectronics letters Vol. 11; no. 3; pp. 179 - 183
Main Author 李翠婷 郑力华 郑悦 李传南 郑传涛
Format Journal Article
LanguageEnglish
Published Tianjin Tianjin University of Technology 01.05.2015
Subjects
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
串联
侧面耦合
微环
特征
电光开关
级联
聚合物
马赫
Cross State
Directional Coupler
Microring Resonator
Switching Energy
Optical Bandwidth
Online AccessGet full text

Cover

More Information
Summary:Structure and design are proposed for a kind of novel polymer Mach-Zehnder electro-optic （EO） switch using side-coupled M series-cascaded EO microrings. Formulations are proposed to analyze its switching characteristics. The dependences of the device＇s performances on M are thoroughly analyzed and concluded. As the increase of M from 2 to 10, the switching voltages for the 9 devices are as low as 0.84 V, 0.82 V, 0.52 V, 0.5 V, 0.37 V, 0.36 V, 0.29 V, 0.28 V and 0.24 V, respectively; whereas the crosstalks under bar state are within -20.79-6.53 dB and those under cross state are within -20.36-5.29 dB. The analysis results indicate that a smaller M is preferred for dropping the insertion loss and crosstalk, and a larger M should be selected to increase the optical bandwidth and minimize the switching energy. Generally, due to low switching voltage, the proposed device shows potential applications in optical networks-on-chip.
Bibliography:Structure and design are proposed for a kind of novel polymer Mach-Zehnder electro-optic （EO） switch using side-coupled M series-cascaded EO microrings. Formulations are proposed to analyze its switching characteristics. The dependences of the device＇s performances on M are thoroughly analyzed and concluded. As the increase of M from 2 to 10, the switching voltages for the 9 devices are as low as 0.84 V, 0.82 V, 0.52 V, 0.5 V, 0.37 V, 0.36 V, 0.29 V, 0.28 V and 0.24 V, respectively; whereas the crosstalks under bar state are within -20.79-6.53 dB and those under cross state are within -20.36-5.29 dB. The analysis results indicate that a smaller M is preferred for dropping the insertion loss and crosstalk, and a larger M should be selected to increase the optical bandwidth and minimize the switching energy. Generally, due to low switching voltage, the proposed device shows potential applications in optical networks-on-chip.
12-1370/TN
LI Cui-ting , ZHENG Li-hua , ZHENG Yue, LI Chuan-nan ,ZHENG Chuan-tao （ State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China）
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-015-5022-1