Microstructure evolution and failure mechanism of electromigration in Ag-alloy bonding wire
Ag-alloy bonding wire has excellent physical properties and is widely applied in microelectronics, but growing concerns about circuit failure induced by electromigration (EM) have raised doubts about this material. One point of frequent debate is the diffusion mechanism. This study provides a novel...
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Published in | Journal of alloys and compounds Vol. 913; p. 165266 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier B.V
25.08.2022
Elsevier BV |
Subjects | |
Online Access | Get full text |
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Summary: | Ag-alloy bonding wire has excellent physical properties and is widely applied in microelectronics, but growing concerns about circuit failure induced by electromigration (EM) have raised doubts about this material. One point of frequent debate is the diffusion mechanism. This study provides a novel perspective by investigating the evolution of the microstructure via electron backscatter diffraction (EBSD) to settle the controversy over the diffusion mechanism of Ag-alloy bonding wire during EM. Particular focuses are the propensity for grain growth, the effects of the coincidence site lattice (CSL) on the grain boundary network, the texture transition, and the influence of thermal energy during EM. A stage-like transition in the dominant diffusion mechanism in different stages of EM is proposed and substantiated from the viewpoint of microstructure evolution.
•Microstructure evolution of the Ag-4 Pd bonding wire during electromigration.•Effect of coincidence site lattice and thermal effect on grain boundary migration during EM is discussed.•Failure mechanism of the Ag-4 Pd bonding wire during EM is elucidated.•Stage-like diffusion path transition was substantiated through the texture study. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2022.165266 |