The design of integrated 0.13-μm CMOS receiver for ultra-wideband systems

A fully integrated 0.13‐μm CMOS receiver for ultra‐wideband systems is implemented. This receiver enables eight bands of operation covering 3.1–9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct‐conversion receiver chain and required noise figure,...

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Bibliographic Details
Published inMicrowave and optical technology letters Vol. 52; no. 4; pp. 841 - 845
Main Authors Park, Bonghyuk, Lee, Kwangchun, Choi, Sangsung, Hong, Songcheol
Format Journal Article
LanguageEnglish
Published Hoboken Wiley Subscription Services, Inc., A Wiley Company 01.04.2010
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Summary:A fully integrated 0.13‐μm CMOS receiver for ultra‐wideband systems is implemented. This receiver enables eight bands of operation covering 3.1–9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct‐conversion receiver chain and required noise figure, is discussed. The average conversion gain and input P1dB are 67.3 dB and −25.4 dBm, respectively. The shunt‐series feedback low‐noise amplifier provides a receiver front‐end noise figure of 7.1–9.5 dB over the entire band. The mixer, based on a folded‐cascode topology, also implements a four‐stage programmable gain amplifier. A fabricated die has been bonded and molded onto PCB for characterization. The receiver chip dissipates 48 mA from 1.2 V power supply. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:841–845, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25083
Bibliography:ark:/67375/WNG-JJNWVRVH-S
istex:0E4C05663222D6EF66CB6A27E2BCE1404BAE2CBD
ArticleID:MOP25083
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.25083