Thermal stability of magnetron sputtered amorphous Si2C

• Published in: Applied surface science Vol. 258; no. 15; pp. 5567 - 5573
• Main Authors: Gustus, R., Gruber, W., Wegewitz, L., Schmidt, H., Maus-Friedrichs, W.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.05.2012; Elsevier
• Subjects: Amorphous films; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystallization; Exact sciences and technology; Physics; Silicon carbide; Sputter-deposition; 68.37.Ps; 68.37.Hk; Silicon carbide; Sputter-deposition; Amorphous films; 68.55.ag; Crystallization; 82.80.Pv; 61.43.Dq; Amorphous state; Thermal stability; Magnetrons; Sputter deposition
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2012.01.166

► We investigated the thermal stability of thin films of amorphous Si2C at 800°C. ► The films were investigated by means of XPS, XRD, AFM, SEM and AES. ► Annealing led to the formation of new SiC bonds. ► Crystallization of silicon took place during thermal annealing. ► Small particles of silicon were formed on the surface of the film. The thermal stability of amorphous Si2C films was studied by means of X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES), Grazing Incidence X-ray Diffractometry (GIXRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The films were deposited by magnetron sputtering onto silicon single crystals. The as-deposited films show a homogenous amorphous structure with a variety of bonding states reaching from homonuclear silicon-like SiSi over mixed SiSiC to heteronuclear SiC bonds. Annealing at 800°C for 1h leads to a depletion of SiSiC bonding states and to the formation of additional SiC bonds. AFM and SEM images showed particles with a remarkable faceting on the surface of the annealed film. In accordance with GIXRD and AES measurements, these observations confirmed the crystallization of silicon during thermal annealing. Besides, no crystallized silicon carbide could be detected.