Influence of coating on the photoluminescence of Tb3＋ doped ZnSe/ZnS core-shell quantum dots

Tb3＋-doped ZnSe and ZnSe/ZnS nanocrystals were synthesized using modified hot-injection method. The observation of the characteristic quantum dots absorption features in a time-gated excitation spectrum was recorded while monitoring Tb3＋ emission at 545 nm provided direct evidence for successful inc...

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Bibliographic Details
Published inJournal of rare earths Vol. 34; no. 8; pp. 828 - 832
Main Authors Cichos, J., Karbowiak, M., Hreniak, D., Stręk, W.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.2016
Subjects
lanthanide
quantum dots
rare earths
terbium
ZnSe
发射性能
吸收特征
掺杂离子
核壳
涂层
激发光谱
量子点
lanthanide
terbium
quantum dots
ZnSe
rare earths
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Summary:Tb3＋-doped ZnSe and ZnSe/ZnS nanocrystals were synthesized using modified hot-injection method. The observation of the characteristic quantum dots absorption features in a time-gated excitation spectrum was recorded while monitoring Tb3＋ emission at 545 nm provided direct evidence for successful incorporation of dopant ions into semiconductor host. Relatively long decay time （-1.5 ms） of Tb3＋ emission indicated that dopant ions were well protected from interaction with surface ligands. Emission properties of core ZnSe：Tb3＋ nanocrystals were only slightly modified upon growth of ZnS shell.
Bibliography:11-2788/TF
quantum dots; lanthanide; ZnSe; terbium; rare earths
Tb3＋-doped ZnSe and ZnSe/ZnS nanocrystals were synthesized using modified hot-injection method. The observation of the characteristic quantum dots absorption features in a time-gated excitation spectrum was recorded while monitoring Tb3＋ emission at 545 nm provided direct evidence for successful incorporation of dopant ions into semiconductor host. Relatively long decay time （-1.5 ms） of Tb3＋ emission indicated that dopant ions were well protected from interaction with surface ligands. Emission properties of core ZnSe：Tb3＋ nanocrystals were only slightly modified upon growth of ZnS shell.
ISSN:1002-0721
2509-4963
DOI:10.1016/S1002-0721(16)60101-1