Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal s...

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Bibliographic Details
Published inApplied physics letters Vol. 105; no. 8
Main Authors Hou, Minmin, Senesky, Debbie G.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 25.08.2014
Subjects
ALUMINIUM
Aluminum
Applied physics
ATOMIC FORCE MICROSCOPY
AUGER ELECTRON SPECTROSCOPY
Chemical reactions
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Contact resistance
Current voltage characteristics
Depth profiling
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
Electrical properties
Electronic devices
ELECTRONIC EQUIPMENT
GALLIUM NITRIDES
GOLD
HEAT STORAGE
LAYERS
Metallizing
Microstructural analysis
MICROSTRUCTURE
Multilayers
Organic chemistry
OXIDATION
PLATINUM
ROUGHNESS
Surface roughness
SURFACES
TEMPERATURE RANGE 0400-1000 K
Thermal energy
Thermal storage
Thermodynamic properties
TITANIUM
Ultrasonic testing
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Summary:The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10−5 Ω-cm2. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.
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content type line 14
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4894290