Preparation of multi-wavelength infrared laser diode

We prepare a new type of multi-wavelength infrared laser diode with four chips, three wavelengths （865 nm, 905 nm and 1064 nm） and two working modes （pulse and single）. The preparation technology of the diode includes two key processes： heat-sink and packaging processing technique to package four di...

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Bibliographic Details
Published inOptoelectronics letters Vol. 10; no. 3; pp. 194 - 197
Main Author 薛明晰 陈志斌 王伟明 刘先红 宋岩 张超 侯章亚
Format Journal Article
LanguageEnglish
Published Heidelberg Tianjin University of Technology 01.05.2014
Subjects
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
制备
加工技术
多波长
峰值波长
散热器
激光二极管
红外
纳米
Preparation Technology
Laser Diode
Laser Chip
Spectral Peak
Aperture Angle
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Summary:We prepare a new type of multi-wavelength infrared laser diode with four chips, three wavelengths （865 nm, 905 nm and 1064 nm） and two working modes （pulse and single）. The preparation technology of the diode includes two key processes： heat-sink and packaging processing technique to package four different chips on a same heat-sink. The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability.
Bibliography:12-1370/TN
XUE Ming-xi , CHEN Zhi-bin , WANG Wei-ming , LIU Xian-hong, SONG Yan , ZHANG Chao , and HOU Zhang-ya Shijiazhuang New Technology Application Institute, Mechanical Engineering College, Shijiazhuang 050003, China
We prepare a new type of multi-wavelength infrared laser diode with four chips, three wavelengths （865 nm, 905 nm and 1064 nm） and two working modes （pulse and single）. The preparation technology of the diode includes two key processes： heat-sink and packaging processing technique to package four different chips on a same heat-sink. The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-014-4019-5