How to reduce the Al-texture in AlN films during film preparation

• Published in: Optoelectronics letters Vol. 8; no. 5; pp. 356 - 358
• Main Authors: Yin, Ju-qian, Chen, Xi-ming, Yang, Bao-he, Zhang, Qian, Wu, Xiao-guo
• Format: Journal Article
• Language: English
• Published: Heidelberg Tianjin University of Technology 01.09.2012
• Subjects: AlN薄膜; Lasers; Optical Devices; Optics; Photonics; Physics; Physics and Astronomy; 制备; 声表面波; 工艺参数; 无线电频率; 氮化铝薄膜; 溅射系统; 纹理; Bulk Acoustic Wave; Surface Acoustic Wave; Physica Status Solidus; Radio Frequency; Apply Physic Letter
• ISSN: 1673-1905; 1993-5013
• DOI: 10.1007/s11801-012-2274-x

The preparation of aluminum nitrogen（AlN） film without Al texture is of great significance for the manufacture of highperformance surface acoustic wave（SAW） device.We research the process factors which bring Al into AlN film due to radio frequency（RF） magnetron sputtering system,and discuss how the process parameters influence the AlN thin film containing Al.In the research,it is found that the high sputtering power,the low deposition pressures and low partial pressure of Ar can lead to growing Al-texture during AlN thin film preparation,and the experiment also shows that filling the chamber with nitrogen gas can recrystallize a small amount of Al composition into AlN film during the annealing process in the high temperature environment.