Current injection tunable monolithically integrated InGaAs-InAlGaAs asymmetric Mach-Zehnder interferometer using quantum-well intermixing

• Published in: IEEE photonics technology letters Vol. 17; no. 8; pp. 1677 - 1679
• Main Authors: Wong, H.Y., Tan, W.K., Bryce, A.C., Marsh, J.H., Arnold, J.M., Krysa, A., Sorel, M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2005; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Arm; Asymetric Mach-Zehnder interferometer; Asymmetry; carrier-induced electrooptic effect; Channel spacing; Current injection; Electrooptic effects; InGaAs-InAlGaAs; Mach-Zehnder interferometers; Noise levels; Optical interferometry; Optical tuning; Optical waveguides; Phase shifting interferometry; Quantum well devices; Quantum wells; quantum-well intermixing (QWI); Silicon dioxide; Tuning; Wavelength division multiplexing; wavelength-division multiplexing (WDM); Wavelengths
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2005.851964

A compact highly efficient wavelength (de)multiplexer with channel spacing of 100 GHz has been realized with a monolithically integrated asymmetric 2 /spl times/ 2 Mach-Zehnder interferometer using a single step sputtered SiO/sub 2/-annealing quantum-well intermixing process. Wavelength tunability and asymmetric loss rebalancing of the device is demonstrated using current injection. Wavelength tuning over 0.8 nm is achieved with only 6 mA of injected current. An extinction ratio of more than 27 dB is obtained.