Comment on “Schottky contact and thermal stability of Ni on n-type GaN” [J. Appl. Phys. 80 , 1623 (1996)]

J. D. Guo et al. [J. Appl. Phys. 80, 1623 (1996)] have studied the thermal stability of Ni on GaN and have deduced by x-ray diffraction measurements that new phases form at the interface between Ni and GaN. This determination, based solely on x-ray diffraction data, is ambiguous, as the peaks assign...

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Bibliographic Details
Published inJournal of applied physics Vol. 82; no. 1; pp. 491 - 492
Main Authors Duxstad, K. J., Haller, E. E.
Format Journal Article
LanguageEnglish
Published 01.07.1997
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Summary:J. D. Guo et al. [J. Appl. Phys. 80, 1623 (1996)] have studied the thermal stability of Ni on GaN and have deduced by x-ray diffraction measurements that new phases form at the interface between Ni and GaN. This determination, based solely on x-ray diffraction data, is ambiguous, as the peaks assigned to the Ga4Ni3 and Ni–N phases can also be attributed to substrate related x-ray peaks.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.365845