Electron mobility in nInSb under pressure

The low electric field Hall electron mobility has been measured in undoped n-type InSb as a function of temperature and pressure. As long as the semiconductor-insulator transition region is avoided ( P > 7.5 kbar and T < 100 K) the mobility below 50 K appears to be dominated by neutral impurit...

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Bibliographic Details
Published inSolid state communications Vol. 56; no. 7; pp. 595 - 598
Main Authors Fong, S.M., Keeler, W.J.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.01.1985
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility; piezoresistance
Physics
Semiconductor materials
Charge carrier mobility
Hall effect
Electronic transition
Experimental study
Indium Antimonides
Pressure
Low temperature
Inorganic compound
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Summary:The low electric field Hall electron mobility has been measured in undoped n-type InSb as a function of temperature and pressure. As long as the semiconductor-insulator transition region is avoided ( P > 7.5 kbar and T < 100 K) the mobility below 50 K appears to be dominated by neutral impurity scattering instead of the expected ionized impurity scattering. The mobility and its pressure derivative agree with the predictions of Ehrenreich for temperatures above 77 K.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(85)90963-9