Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

• Published in: Chinese physics B Vol. 31; no. 7; pp. 76103 - 503
• Main Authors: Liu, Ren-Jie, Lin, Jia-Jie, Shen, Zheng-Hao, Sun, Jia-Liang, You, Tian-Gui, Li, Jin, Liao, Min, Zhou, Yi-Chun
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.06.2022; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China; Hunan Provincial Key Laboratory of Thin Film Materials and Devices,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China%College of Information Science and Engineering,Jiaxing University,Jiaxing 314001,China; State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science(CAS),Shanghai 200050,China%State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science(CAS),Shanghai 200050,China%Beijing Semicore ZKX Electronics Equipment Co.,Ltd,Beijing 100000,China
• Subjects: GaSbOI; heterogeneous integration; ion-slicing technique; heterogeneous integration; GaSbOI; ion-slicing technique
• ISSN: 1674-1056
• DOI: 10.1088/1674-1056/ac5605

Integration of the high-quality GaSb layer on an Si substrate is significant to improve the GaSb application in optoelectronic integration. In this work, a suitable ion implantation fluence of 5 × 10 16 -cm −2 H ions for GaSb layer transfer is confirmed. Combining the strain change and the defect evolution, the blistering and exfoliation processes of GaSb during annealing is revealed in detail. With the direct wafer bonding, the GaSb layer is successfully transferred onto a (100) Si substrate covered by 500-nm thickness thermal oxide SiO 2 layer. After being annealed at 200 °C, the GaSb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum (FWHM) of the x-ray rocking curve (XRC).