ZnCl2-assisted Synthesis of ZnSe Polycrystal

A chemical-assisted element direct-reaction method is developed to synthesize ZnSe compound semiconductor material at a relatively low temperature （-1000 ℃）. ZnSe polycrystal was obtained in the closed-tube systems with Zn-Se, Zn-Se-Zn（NHa）2CI2, ZnoSe-NH4CI and Zn-Se-ZnCI2. The as-synthesized sample...

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Bibliographic Details
Published inJournal of materials science & technology Vol. 28; no. 4; pp. 373 - 378
Main Authors Liu, Changyou, Wang, Tao, Zha, Gangqiang, Gu, Zhi, Jie, Wanqi
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.04.2012
Subjects
Crystallites
Growth from vapor
Semiconducting II-VI materials
X-射线衍射
Zinc compounds
化合物半导体材料
合成效率
多晶
氯化锌法
热力学分析
直接反应法
硒化锌
Growth from vapor
Zinc compounds
Crystallites
Semiconducting II-VI materials
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Summary:A chemical-assisted element direct-reaction method is developed to synthesize ZnSe compound semiconductor material at a relatively low temperature （-1000 ℃）. ZnSe polycrystal was obtained in the closed-tube systems with Zn-Se, Zn-Se-Zn（NHa）2CI2, ZnoSe-NH4CI and Zn-Se-ZnCI2. The as-synthesized samples were tested by X-ray diffraction （XRD）, thermogravimetric analysis （TGA） and analyzed by thermodynamic numerical method. The results demonstrate that the synthesis efficiency is higher than 99.96% for Zn-Se-ZnCl2 system at around 1000 ℃ for 3 weeks. It also exhibits that not only temperature, but also low apparent ratio of volume and surface area of the source materials and higher ZnCl2 content are required to achieve high synthesis efficiency. A SeCI transporting reaction synthesis process is proposed based on the thermodynamic analysis.
Bibliography:A chemical-assisted element direct-reaction method is developed to synthesize ZnSe compound semiconductor material at a relatively low temperature （-1000 ℃）. ZnSe polycrystal was obtained in the closed-tube systems with Zn-Se, Zn-Se-Zn（NHa）2CI2, ZnoSe-NH4CI and Zn-Se-ZnCI2. The as-synthesized samples were tested by X-ray diffraction （XRD）, thermogravimetric analysis （TGA） and analyzed by thermodynamic numerical method. The results demonstrate that the synthesis efficiency is higher than 99.96% for Zn-Se-ZnCl2 system at around 1000 ℃ for 3 weeks. It also exhibits that not only temperature, but also low apparent ratio of volume and surface area of the source materials and higher ZnCl2 content are required to achieve high synthesis efficiency. A SeCI transporting reaction synthesis process is proposed based on the thermodynamic analysis.
21-1315/TG
Crystallites; Growth from vapor; Zinc compounds; Semiconducting II-VI materials
ISSN:1005-0302
1941-1162
DOI:10.1016/S1005-0302(12)60070-X