Fast Cascoded Quenching Circuit for Decreasing Afterpulsing Effects in 0.35- \mu m CMOS

In this letter, we present a fully integrated single-photon avalanche diode (SPAD) using a fast cascoded quenching circuit (QC) fabricated in a 0.35-μm CMOS process. The QC features a fast active quenching time of only 0.48 ns and an adjustable total dead time (9.5-17 ns) to further reduce afterpuls...

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Bibliographic Details
Published inIEEE solid-state circuits letters Vol. 1; no. 3; pp. 62 - 65
Main Authors Enne, R., Steindl, B., Hofbauer, M., Zimmermann, H.
Format Journal Article
LanguageEnglish
Published IEEE 01.03.2018
Subjects
Avalanche photodiodes
Avalanche photodiodes (APDs)
Cathodes
CMOS technology
Electric potential
MOSFET
optical receiver
photon counting
Photonics
quenching circuit (QC)
single-photon avalanche diode (SPAD)
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Summary:In this letter, we present a fully integrated single-photon avalanche diode (SPAD) using a fast cascoded quenching circuit (QC) fabricated in a 0.35-μm CMOS process. The QC features a fast active quenching time of only 0.48 ns and an adjustable total dead time (9.5-17 ns) to further reduce afterpulsing effects. To prove the quenching performance, the circuit was integrated together with a large-area SPAD having an active diameter of 80 μm. Experimental verification of reduction of afterpulsing with early quenching is shown. Thus, a minimal afterpulsing probability of 0.9% was measured at 6.6 V excess bias and a photon detection probability of 22% at a wavelength of 850 nm was achieved.
ISSN:2573-9603
2573-9603
DOI:10.1109/LSSC.2018.2827881