Electronic properties of MnO(110) film grown on Cu (111)

• Published in: Physica scripta Vol. 98; no. 11; pp. 115954 - 115964
• Main Authors: Alí, Astrid, Caetano, Rubem, Barreto, Jade, Félix, Guilherme, Soares Archanjo, Braulio, Achete, C A, Stavale, Fernando, Annese, Emilia
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.11.2023
• Subjects: electronic properties; film strain; manganese oxide; resonant photoemission
• ISSN: 0031-8949; 1402-4896
• DOI: 10.1088/1402-4896/acfc86

Abstract In this study, we investigated MnO thin films grown on Cu(111) using a soft x-ray and UV based spectroscopy, low energy electron diffraction (LEED), scanning tunneling (STM) and scanning transmission electron microscopy (STEM). MnO thin film assumes (110) preferential plane orientation organized in different spatial domains to better adapt to Cu(111) surface and an in-plane/out-of-plane lattice parameter variation up to 11% with respect to bulk counterpart originating a sizeable XLD signal at Mn L 2,3 edges. The formation of oxidized Cu region during the MnO thin film growth is not avoidable due to the copper reactivity to oxygen and at the interface the coexistence of MnO islands alternated with Cu 2 O regions was observed by STM. Mn 2p and Mn 3s core level photoemission line shapes present a slight change in multiplet peak relative intensity with respect bulk MnO counterpart due to the role of Cu substrate in the core level relaxation process. The photon energy dependent photoemission spectra of valence band discriminate the MnO states and indicate a weak influence of the substrate once the film thickness is reduced to 1 nm. These findings open new route in the tuning oxide thin film properties.