Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser
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| Published in | Electronics letters Vol. 48; no. 11; pp. 644 - 646 |
|---|---|
| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Stevenage
Institution of Engineering and Technology
24.05.2012
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| Subjects | |
| Online Access | Get full text |
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| Author | WADA, O CHILDS, D. T. D CHEN, S. M JIN, X HOGG, R. A ZHANG, Z. Y HUGUES, M ZHOU, K. J |
|---|---|
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| Keywords | Quantum well Quantum dot lasers Quantum dot Active region Threshold current Ground state Current density Room temperature Excited state Semiconductor laser |
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| SubjectTerms | Applied sciences Compound structure devices Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Materials science Nanoscale materials and structures: fabrication and characterization Optics Physics Quantum dots Quantum wells Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers; laser diodes |
| Title | Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser |
| Volume | 48 |
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