Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser

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Bibliographic Details
Published inElectronics letters Vol. 48; no. 11; pp. 644 - 646
Main Authors CHEN, S. M, ZHOU, K. J, ZHANG, Z. Y, WADA, O, CHILDS, D. T. D, HUGUES, M, JIN, X, HOGG, R. A
Format Journal Article
LanguageEnglish
Published Stevenage Institution of Engineering and Technology 24.05.2012
Subjects
Applied sciences
Compound structure devices
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Materials science
Nanoscale materials and structures: fabrication and characterization
Optics
Physics
Quantum dots
Quantum wells
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers; laser diodes
Quantum well
Quantum dot lasers
Quantum dot
Active region
Threshold current
Ground state
Current density
Room temperature
Excited state
Semiconductor laser
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ISSN:0013-5194
1350-911X
DOI:10.1049/el.2012.0710