Theory of Spin Torque Switching Current for the Double Magnetic Tunnel Junction

A single-domain model for spin-transfer torque switching of double magnetic tunnel junctions with perpendicularly magnetized layers is developed. An analytical formula is derived for the switching current threshold, I c0 . Surprisingly, the model predicts that the switching current can be reduced by...

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Bibliographic Details
Published inIEEE magnetics letters Vol. 8; pp. 1 - 5
Main Author Worledge, Daniel C.
Format Journal Article
LanguageEnglish
Published IEEE 2017
Subjects
double magnetic tunnel junction
dual magnetic tunnel junction
Junctions
magnetic random-access memory
Magnetic tunneling
Magnetization
Perpendicular magnetic anisotropy
spin-transfer torque
Spintronic memory and logic
Switches
Torque
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Summary:A single-domain model for spin-transfer torque switching of double magnetic tunnel junctions with perpendicularly magnetized layers is developed. An analytical formula is derived for the switching current threshold, I c0 . Surprisingly, the model predicts that the switching current can be reduced by a factor of 10 compared to single magnetic tunnel junctions, for sufficiently large spin-polarizations. This effect is explained in terms of the "enhanced antiparallel-to-parallel" spin torque, familiar from single magnetic tunnel junctions.
ISSN:1949-307X
1949-3088
DOI:10.1109/LMAG.2017.2707331