Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes

• Published in: Chinese physics B Vol. 32; no. 8; pp. 87301 - 464
• Main Authors: Zhang, Tao, Li, Ruo-Han, Su, Kai, Su, Hua-Ke, Lv, Yue-Guang, Xu, Sheng-Rui, Zhang, Jin-Cheng, Hao, Yue
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.07.2023; Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China%Xi'an Microelectronics Technology Institute,Xi'an 710054,China%School of Aerospace Science and Technology,Xidian University,Xi'an 710071,China
• Subjects: AlGaN/GaN SBDs; dynamic on-resistance; GaN passivation layer; proton irradiation; dynamic on-resistance; proton irradiation; GaN passivation layer; AlGaN/GaN SBDs
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/acbded

Dynamic characteristics of the single-crystal GaN-passivated lateral AlGaN/GaN Schottky barrier diodes (SBDs) treated with proton irradiation are investigated. Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance ( R ON ) are observed under 10-MeV proton irradiation at a fluence of 10 14 cm −2 . Because of the existing negative polarization charges induced at GaN/AlGaN interface, the dynamic ON-resistance ( R ON,dyn ) shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by protons. Furthermore, the normalized R ON,dyn increases by only 14% that of the initial case after a 100-s-long bias of −600 V has been applied to the irradiated devices. The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.