Enhancing the photoelectrochemical properties of quantum dot-sensitized solar cells based on TiO2 nanorods by using fast hole transfer channels

• Published in: Materials letters Vol. 243; pp. 176 - 179
• Main Authors: Lu, Yongjuan, Jia, Junhong, Lu, Cheng, Huang, Jing, Feng, Xiaochun
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.05.2019; Elsevier BV
• Subjects: Bismuth sulfides; Copper sulfides; Crystal structure; Electrodes; Hole transfer layer; Materials science; Morphology; Nanorods; Optical properties; Photoelectric effect; Photoelectric emission; Photovoltaic cells; Quantum dot-sensitized solar cell; Quantum dots; Quantum efficiency; Semiconductor; Solar cells; Thin films; TiO2/Bi2S3/CuS; Titanium dioxide; Thin films; Semiconductor; Hole transfer layer; Quantum dot-sensitized solar cell; TiO2/Bi2S3/CuS
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2019.01.110

•The p-type CuS thin film exhibits high electrical conductivity.•CuS acts a hole transporting layer (HTL) facilitating smooth transfer of hole.•After introducing a HTL, the PCE improved by 55% with 0.6% PCE for TiO2/Bi2S3(4)/CuS. To search a viable way to enhance the photoconversion efficiency (PCE) of Quantum dot-sensitized solar cells (QDSSCs), we have designed a method of introducing a hole transporting layer (HTL) of p-type CuS to form the TiO2/Bi2S3/CuS composite electrodes. The morphology, crystal structure, optical properties and PEC performance of TiO2/Bi2S3/CuS composite electrodes were investigated in detail. The results showed that the photocurrent density of TiO2/Bi2S3/CuS was eight times higher than that of single TiO2 and 1.51 times higher than that of TiO2/Bi2S3 NRs. Therefore, this study provides helpful insights into rational design and fabrication of novel and efficient method for improving PEC performance of the QDSSCs.