A Domino Bootstrapping 12V GaN Driver for Driving an On-Chip 650V eGaN Power Switch for 96% High Efficiency

• Published in: 2020 IEEE Symposium on VLSI Circuits pp. 1 - 2
• Main Authors: Chen, Hsuan-Yu, Lin, Wei-Tin, Liao, Cheng-Hsiang, Lin, Zong-Yi, Zhang, Zhi-Qiang, Kao, Yu-Yung, Chen, Ke-Horng, Lin, Ying-Hsi, Lin, Shian-Ru, Tsai, Tsung-Yen
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2020
• Subjects: Gallium nitride; Gate drivers; HEMTs; Logic gates; Switches; Switching circuits; Timing

The proposed monolithically integrated 12V Gallium Nitride (GaN) driver utilizes a domino bootstrapping technique to an on-chip 650V enhancement mode Gallium Nitride (eGaN) in a GaN process. The proposed self-biasing loop (SBL) reduces the quiescent current to 120μA and achieves 96% high efficiency....