A Domino Bootstrapping 12V GaN Driver for Driving an On-Chip 650V eGaN Power Switch for 96% High Efficiency

The proposed monolithically integrated 12V Gallium Nitride (GaN) driver utilizes a domino bootstrapping technique to an on-chip 650V enhancement mode Gallium Nitride (eGaN) in a GaN process. The proposed self-biasing loop (SBL) reduces the quiescent current to 120μA and achieves 96% high efficiency....

Full description

Saved in:
Bibliographic Details
Published in2020 IEEE Symposium on VLSI Circuits pp. 1 - 2
Main Authors Chen, Hsuan-Yu, Lin, Wei-Tin, Liao, Cheng-Hsiang, Lin, Zong-Yi, Zhang, Zhi-Qiang, Kao, Yu-Yung, Chen, Ke-Horng, Lin, Ying-Hsi, Lin, Shian-Ru, Tsai, Tsung-Yen
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2020
Subjects
Gallium nitride
Gate drivers
HEMTs
Logic gates
Switches
Switching circuits
Timing
Online AccessGet full text

Cover

More Information
Summary:The proposed monolithically integrated 12V Gallium Nitride (GaN) driver utilizes a domino bootstrapping technique to an on-chip 650V enhancement mode Gallium Nitride (eGaN) in a GaN process. The proposed self-biasing loop (SBL) reduces the quiescent current to 120μA and achieves 96% high efficiency. Furthermore, derivative-voltage divided by derivative-time (dV/dt) controller with a dual current supply (DCS) technique is proposed to modulate the slew rate of eGaN HEMT from 53.3V/ns to 12.5V/ns.
ISSN:2158-5636
DOI:10.1109/VLSICircuits18222.2020.9162979