Structure and behavior of ZrO2-graphene-ZrO2 stacks

ZrO2-graphene-ZrO2 layered structures were built and their crystallinity was characterized before resistive switching measurements. Thin nanocrystalline ZrO2 dielectric films were grown by atomic layer deposition on chemical vapor deposited graphene. Graphene was transferred, prior to the growth of...

Full description

Saved in:
Bibliographic Details
Published inJournal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 38; no. 6
Main Authors Kahro, Tauno, Castán, Helena, Dueñas, Salvador, Merisalu, Joonas, Kozlova, Jekaterina, Jõgiaas, Taivo, Piirsoo, Helle-Mai, Kasikov, Aarne, Ritslaid, Peeter, Mändar, Hugo, Tarre, Aivar, Tamm, Aile, Kukli, Kaupo
Format Journal Article
LanguageEnglish
Published 01.12.2020
Online AccessGet full text

Cover

More Information
Summary:ZrO2-graphene-ZrO2 layered structures were built and their crystallinity was characterized before resistive switching measurements. Thin nanocrystalline ZrO2 dielectric films were grown by atomic layer deposition on chemical vapor deposited graphene. Graphene was transferred, prior to the growth of the ZrO2 overlayer, to the ZrO2 film pre-grown on titanium nitride. Nucleation and growth of the top ZrO2 layer was improved after growing an amorphous Al2O3 interface layer on graphene at lowered temperatures. Studies on resistive switching in such structures revealed that the exploitation of graphene interlayers could modify the operational voltage ranges and somewhat increase the ratio between high and low resistance states.
ISSN:0734-2101
1520-8559
DOI:10.1116/6.0000390