Low temperature synthesis of copper telluride nanostructures: phase formation, growth, and electrical transport properties

We propose a low cost solution-based approach to synthesize various low dimensional copper telluride (Cu-Te) nanostructures. By precisely controlling different ethylenediamine (EDA) ratios in a reaction solution, we are able to control the phases and morphologies of Cu-Te nanostructures from Te/Cu c...

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Published inJournal of materials chemistry Vol. 22; no. 15; pp. 7098 - 7103
Main Authors Lin, Ching-Chun, Lee, Wei-Fan, Lu, Ming-Yen, Chen, Szu-Ying, Hung, Min-Hsiu, Chan, Tsung-Cheng, Tsai, Hung-Wei, Chueh, Yu-Lun, Chen, Lih-Juann
Format Journal Article
LanguageEnglish
Published 01.01.2012
Subjects
ANNEALING PROCESSES
ANNEALING TEMPERATURE
COMPOSITES
Copper
COPPER TELLURIDE
MICROSTRUCTURES
MICROWIRE
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
PHASES
SOLAR CELLS
Stability
TELLURIDES
Volume fraction
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Summary:We propose a low cost solution-based approach to synthesize various low dimensional copper telluride (Cu-Te) nanostructures. By precisely controlling different ethylenediamine (EDA) ratios in a reaction solution, we are able to control the phases and morphologies of Cu-Te nanostructures from Te/Cu core-shell nanowires at a low volume fraction of EDA <8%, Cu sub(3)Te sub(2) nanowires at the volume fraction of EDA between 8% and 24%, Cu sub(2)Te nanowires and nanobelts at the volume fraction of EDA between 24% and 48%, to Cu sub(2)Te/Cu core-shell nanobelts at the volume fraction of EDA over 48%. The formation mechanism is attributed to varied tendency of different coordinative copper complexes. In situheating XRD results and TEM observations of the Cu sub(2)Te nanowires reveal the phase transition from hexagonal P3m1, hexagonal P6/mmmto cubic structure at annealing temperatures of 25 degree C, 500 degree C to 600 degree C, respectively. The lack of back gate dependence demonstrates the metallic feature of Te/Cu core-shell nanowire while obvious p-type behavior can be found for Cu sub(2)Te nanowire with an on/off ratio of similar to 10 super(4) and the field effect hole mobility of similar to 18 cm super(2) V super(-1) s super(-1). These Cu-Te nanostructures exhibit controllable transport behaviors from metallic to semiconducting natures with different EDA volume fractions and have promising applications in electronics such as nonvolatile memory, photodetectors, and solar cells.
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ISSN:0959-9428
1364-5501
DOI:10.1039/c2jm16486h