Surface characterization of Mo oxynitride films obtained by RF sputtering at various N2 ratios

Molybdenum oxynitride (MoN x O y ) thin films were deposited on p-type Si(100) wafer by rf magnetron sputtering method at various nitrogen gas ratios. The surface characteristics of deposited thin films were investigated using scanning electron microscopy, atomic force microscopy, X-ray diffraction,...

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Bibliographic Details
Published inMetals and materials international Vol. 19; no. 1; pp. 55 - 60
Main Authors Park, Juyun, Kang, Yong-Cheol
Format Journal Article
LanguageEnglish
Published Springer The Korean Institute of Metals and Materials 2013
Springer Nature B.V
대한금속·재료학회
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Summary:Molybdenum oxynitride (MoN x O y ) thin films were deposited on p-type Si(100) wafer by rf magnetron sputtering method at various nitrogen gas ratios. The surface characteristics of deposited thin films were investigated using scanning electron microscopy, atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The thickness of films decreased down to 70 from 1000 nm and the roughness was varied with increasing N 2 gas ratio. The formation of MoN x O y was confirmed by existence of Mo species between Mo δ+ and Mo 5+ oxidation state and ON bond in XP spectra. At 0% of N 2 gas ratio, metallic simple cubic Mo structure was observed. As the N 2 gas ratio increased, Mo nitrate and Mo silicate phases were appeared.
Bibliography:G704-000797.2013.19.1.018
ISSN:1598-9623
2005-4149
DOI:10.1007/s12540-013-1010-9