Surface characterization of Mo oxynitride films obtained by RF sputtering at various N2 ratios
Molybdenum oxynitride (MoN x O y ) thin films were deposited on p-type Si(100) wafer by rf magnetron sputtering method at various nitrogen gas ratios. The surface characteristics of deposited thin films were investigated using scanning electron microscopy, atomic force microscopy, X-ray diffraction,...
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Published in | Metals and materials international Vol. 19; no. 1; pp. 55 - 60 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Springer
The Korean Institute of Metals and Materials
2013
Springer Nature B.V 대한금속·재료학회 |
Subjects | |
Online Access | Get full text |
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Summary: | Molybdenum oxynitride (MoN
x
O
y
) thin films were deposited on p-type Si(100) wafer by rf magnetron sputtering method at various nitrogen gas ratios. The surface characteristics of deposited thin films were investigated using scanning electron microscopy, atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The thickness of films decreased down to 70 from 1000 nm and the roughness was varied with increasing N
2
gas ratio. The formation of MoN
x
O
y
was confirmed by existence of Mo species between Mo
δ+
and Mo
5+
oxidation state and ON bond in XP spectra. At 0% of N
2
gas ratio, metallic simple cubic Mo structure was observed. As the N
2
gas ratio increased, Mo nitrate and Mo silicate phases were appeared. |
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Bibliography: | G704-000797.2013.19.1.018 |
ISSN: | 1598-9623 2005-4149 |
DOI: | 10.1007/s12540-013-1010-9 |