Modeling the Dynamic Response of an Optically-Injected Nanostructure Diode Laser

• Published in: IEEE journal of quantum electronics Vol. 47; no. 6; pp. 827 - 833
• Main Authors: Pochet, M C, Naderi, N A, Kovanis, V, Lester, L F
• Format: Journal Article
• Language: English
• Published: IEEE 01.06.2011
• Subjects: Laser mode locking; Laser stability; Mathematical model; Nonlinear dynamics; nonlinear gain; Nonlinear optics; optical injection; Photonics; quantum-dash laser; semiconductor laser; Semiconductor lasers
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2011.2124445

We reformulate a dimensionless approach to evaluate the operational dynamics of an optically injected nanostructure laser as a function of the injection strength and the detuning frequency to account for the large nonlinear gain component associated with nanostructure lasers through the nonlinear carrier relaxation rate and gain compression coefficient. The large nonlinear carrier relaxation rate and gain compression coefficient are shown to impact the level of stability numerically predicted in the optically injected laser at low injected power levels. The numerical model is verified experimentally by optically injecting a quantum-dash Fabry-Perot laser with an operating wavelength of approximately 1550 nm. The quantum-dash laser's large damping rate, gain compression coefficient, and sufficiently small linewidth enhancement factor are observed to inhibit period-doubling and chaotic operation under zero frequency-detuning conditions. The inclusion of the nonlinear carrier relaxation rate in the simulation is shown to greatly enhance the agreement between the numerical predictions and the experimentally observed dynamics.