Ultrafast Surface Plasmon III-V Photodetectors Based on Nanomonopoles

A nanoantenna-based plasmonic photodetector is proposed and investigated theoretically. An array of interconnected nanomonopoles on a film of InGaAs on n-doped InP is modeled. The infrared (~1550 nm) responsivity of the structure can reach ~200 mA/W for a 20-nm-thick InGaAs layer. The optimum 3-dB e...

Full description

Saved in:
Bibliographic Details
Published inJournal of lightwave technology Vol. 34; no. 20; pp. 4682 - 4687
Main Authors Mousavi, Saba Siadat, Stohr, Andreas, Berini, Pierre
Format Journal Article
LanguageEnglish
Published IEEE 15.10.2016
Subjects
III-V semiconductor materials
Indium gallium arsenide
Indium phosphide
Nanoantenna
Optical films
photodetector
Photodetectors
Resistance
surface plamson
THz
Online AccessGet full text

Cover

More Information
Summary:A nanoantenna-based plasmonic photodetector is proposed and investigated theoretically. An array of interconnected nanomonopoles on a film of InGaAs on n-doped InP is modeled. The infrared (~1550 nm) responsivity of the structure can reach ~200 mA/W for a 20-nm-thick InGaAs layer. The optimum 3-dB electrical bandwidth of the device is calculated to be ~1 THz for the case of a 20-nm-thick InGaAs layer and a 4 × 4 nanomonopole array. The electrical bandwidth is shown to increase by decreasing the number of elements in the array. A simple linear model for the total resistance of the structure is proposed and validated. The total resistance increases by increasing the thickness of the InGaAs layer and by decreasing the number of array elements.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2016.2575002