Design of Various Dipolar Source for Improvement of Electrostatic Discharge Protection Performance of 0.18 μm_30 V DDDNMOS Transistor for High Voltage Application

The double diffused drain N-type MOS (DDDNMOS) transistor with a dipolar source is proposed to realize stable and robust electrostatic discharge (ESD) protection performance. The proposed dipolar source is a structure in which a P+ diffusion layer is intentionally inserted on the side of the N+ sour...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 24; no. 3; pp. 249 - 258
Main Author Seo, Yong-Jin
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.06.2024
Subjects
전기공학
Electrostatic discharge (ESD)
double snapback
dipolar source
channel blocking
double diffused drain n-type MOS (DDDNMOS)
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Summary:The double diffused drain N-type MOS (DDDNMOS) transistor with a dipolar source is proposed to realize stable and robust electrostatic discharge (ESD) protection performance. The proposed dipolar source is a structure in which a P+ diffusion layer is intentionally inserted on the side of the N+ source to prevent lateral diffusion of the electron-rich region from the N+ source. According to the 2D simulation and measured TLP results, it was found that the inserted P+ diffusion layer effectively prevented the formation of deep electron channels caused by electron injection. Therefore, the double snapback phenomenon, which is a problem in the conventional DDDNMOS standard device, can be solved. KCI Citation Count: 0
ISSN:1598-1657
2233-4866
2233-4866
1598-1657
DOI:10.5573/JSTS.2024.24.3.249