Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

We report a solution-processed a top gate indium-gallium-zinc oxide thin film transistors (IGZO TFTs) with high- k zirconium oxide (ZrOx) dielectric. Both the dielectrics and electrodes were fabricated by spin coating or screen printing. The ZrOx exhibits an amorphous structure and smooth enough to...

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Bibliographic Details
Published inJournal of display technology Vol. 11; no. 9; pp. 764 - 767
Main Authors Gao, Yana, Zhang, Jianhua, Li, Xifeng
Format Journal Article
LanguageEnglish
Published IEEE 01.09.2015
Subjects
Dielectrics
Electrodes
High K dielectric materials
Logic gates
Printing
Solution-processed
Thin film transistors
thin-film transistors (TFTs)
top gate
zirconium oxide (ZrOx)
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Summary:We report a solution-processed a top gate indium-gallium-zinc oxide thin film transistors (IGZO TFTs) with high- k zirconium oxide (ZrOx) dielectric. Both the dielectrics and electrodes were fabricated by spin coating or screen printing. The ZrOx exhibits an amorphous structure and smooth enough to be used as a gate insulator for TFT. The TFT with maximum process temperature of 300 °C had a saturation mobility of 0.2 cm 2 /V·s, an on/off ratio of 10 3 , a threshold voltage of 0.3 V, and the subthreshold swing is 0.34 V/decade.
ISSN:1551-319X
1558-9323
DOI:10.1109/JDT.2015.2438955