Improving the Electrostatic Discharge Robustness of a Junction Barrier Schottky Diode Using an Embedded p-n-p BJT

The high-voltage (H-V) junction barrier Schottky (JBS) diode is often incorporated into the input or output of H-V integrated circuits. When the chip is connected to the external environment, it inevitably suffers electrostatic discharge (ESD) stress. However, the JBS diode can only withstand the fo...

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Bibliographic Details
Published inIEEE electron device letters Vol. 35; no. 10; pp. 1052 - 1054
Main Authors Chung-Yu Hung, Tzu-Cheng Kao, Jian-Hsing Lee, Jeng Gong, Kuo-Hsuan Lo, Hung-Der Su, Chih-Fang Haung
Format Journal Article
LanguageEnglish
Published IEEE 01.10.2014
Subjects
Electrostatic discharges
ESD
Human-body mode
junction barrier Schottky diode (JBS)
Junctions
Leakage currents
machine model
Robustness
Schottky diodes
Threshold voltage
machine model
junction barrier Schottky diode (JBS)
ESD
Human-body mode
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Summary:The high-voltage (H-V) junction barrier Schottky (JBS) diode is often incorporated into the input or output of H-V integrated circuits. When the chip is connected to the external environment, it inevitably suffers electrostatic discharge (ESD) stress. However, the JBS diode can only withstand the forward-mode ESD but it is highly vulnerable to reverse-mode ESD. In this letter, a new kind of JBS diode that is incorporated with a p-n-p bipolar is developed. The experimental results demonstrated that the new device can improve the failure threshold voltages of the human body mode and machine mode by at least four times. The area increase for the new device is 2.2%.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2350020