Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction
An InGaN-based light-emitting diode with a p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of the current-crowding phenomenon yields a reduced parasit...
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Published in | IEEE journal of quantum electronics Vol. 47; no. 6; pp. 755 - 761 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.06.2011
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Subjects | |
Online Access | Get full text |
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Summary: | An InGaN-based light-emitting diode with a p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of the current-crowding phenomenon yields a reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors, including lower turn-on voltage, lower parasitic series resistance, and reduced p-n junction temperature, are achieved. In addition, due to the improved current-spreading ability, longer life-time, driving at medium current injection (60 mA), as well as significantly enhanced electrostatic discharge performance, are obtained. |
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ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.2011.2114330 |