Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

An InGaN-based light-emitting diode with a p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of the current-crowding phenomenon yields a reduced parasit...

Full description

Saved in:
Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 47; no. 6; pp. 755 - 761
Main Authors Liu, Yi-Jung, Huang, Chien-Chang, Chen, Tai-You, Hsu, Chi-Shiang, Liou, Jian-Kai, Liu, Wen-Chau
Format Journal Article
LanguageEnglish
Published IEEE 01.06.2011
Subjects
Current spreading
Electrostatic discharge
Gallium nitride
GaN
junction temperature
Junctions
Light emitting diodes
light-emitting diode
Performance evaluation
Power generation
Quantum well devices
Online AccessGet full text

Cover

More Information
Summary:An InGaN-based light-emitting diode with a p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of the current-crowding phenomenon yields a reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors, including lower turn-on voltage, lower parasitic series resistance, and reduced p-n junction temperature, are achieved. In addition, due to the improved current-spreading ability, longer life-time, driving at medium current injection (60 mA), as well as significantly enhanced electrostatic discharge performance, are obtained.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2011.2114330