Impact ionisation in strained SiGe pMOSFETs

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Bibliographic Details
Published inElectronics letters Vol. 41; no. 16; pp. 925 - 927
Main Authors NICHOLAS, G, DOBBIE, A, GRASBY, T. J, WHALL, T. E, PARKER, E. H. C
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 04.08.2005
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Semiconductor alloys
MOSFET
Density of states
Elastoplasticity
Hole mobility
PMOS technology
Impact ionization
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ISSN:0013-5194
1350-911X
DOI:10.1049/el:20052074