Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates

In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped air void was formed at the interface between crown-shaped patterned sapphire substrates (CPSS) and the GaN epilayer by...

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Published inIEEE photonics technology letters Vol. 24; no. 14; pp. 1212 - 1214
Main Authors Ching-Hsueh Chiu, Lung-Hsing Hsu, Chia-Yu Lee, Chien-Chung Lin, Bo-Wen Lin, Shang-Ju Tu, Yan-Hao Chen, Che-Yu Liu, Wen-Ching Hsu, Yu-Pin Lan, Jinn-Kong Sheu, Tien-Chang Lu, Gou-Chung Chi, Hao-Chung Kuo, Shing-Chung Wang, Chun-Yen Chang
Format Journal Article
LanguageEnglish
Published IEEE 15.07.2012
Subjects
Epitaxial growth
Epitaxial lateral overgrowth
Gallium nitride
Light emitting diodes
metal-organic chemical vapor deposition
Optical variables control
Photonics
Substrates
Temperature measurement
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Summary:In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped air void was formed at the interface between crown-shaped patterned sapphire substrates (CPSS) and the GaN epilayer by conventional photolithography. The transmission electron microscopy images demonstrate that the threading dislocations were significantly suppressed by epitaxial lateral overgrowth (ELOG). The Monte Carlo ray-tracing simulation reveals that the light extraction of the air-voids embedded LED was dramatically increased due to a strong light reflection and redirection by the air voids.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2195779