Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI
A novel superjunction (SJ) lateral double-diffused MOSFET ( >950 V) with a thin layer SOI combining the advantage of low specific on-resistance R on,sp of the SJ and the high breakdown voltage VB of the thin SOI is proposed and experimentally demonstrated in this letter. Based on our previously d...
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Published in | IEEE electron device letters Vol. 38; no. 11; pp. 1555 - 1558 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.11.2017
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Subjects | |
Online Access | Get full text |
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