Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI

• Published in: IEEE electron device letters Vol. 38; no. 11; pp. 1555 - 1558
• Main Authors: Zhang, Wentong, Zhan, Zhenya, Yu, Yang, Cheng, Shikang, Gu, Yan, Zhang, Sen, Luo, Xiaorong, Li, Zehong, Qiao, Ming, Li, Zhaoji, Zhang, Bo
• Format: Journal Article
• Language: English
• Published: IEEE 01.11.2017
• Subjects: Breakdown voltage; breakdown voltage (VB); Dielectrics; Doping; Electric fields; Optimization; Silicon-on-insulator; sp; specific on-resistance (Ron; Substrates; Superjunction; T-SJ LDMOS; thin layer SOI

A novel superjunction (SJ) lateral double-diffused MOSFET ( >950 V) with a thin layer SOI combining the advantage of low specific on-resistance R on,sp of the SJ and the high breakdown voltage VB of the thin SOI is proposed and experimentally demonstrated in this letter. Based on our previously d...