Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

In this split-wafer study, we have compared the dc, pulsed, small and large signal RF electrical performance of nanocrystalline diamond (NCD) coated AlGaN/GaN high electron mobility transistors (HEMTs) to reference devices with silicon nitride passivation only. The NCD-coated HEMTs were observed to...

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Bibliographic Details
Published inIEEE electron device letters Vol. 35; no. 10; pp. 1013 - 1015
Main Authors Meyer, David J., Koehler, Andrew D., Hobart, Karl D., Eddy, Charles R., Feygelson, Tatyana I., Anderson, Travis J., Roussos, Jason A., Tadjer, Marko J., Downey, Brian P., Katzer, D. Scott, Pate, Bradford B., Ancona, Mario G.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.2014
Subjects
Aluminum gallium nitride
amplifier
Diamonds
Gallium nitride
HEMTs
load-pull
MODFETs
NCD
Performance evaluation
Radio frequency
reliability
amplifier
load-pull
NCD
reliability
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Summary:In this split-wafer study, we have compared the dc, pulsed, small and large signal RF electrical performance of nanocrystalline diamond (NCD) coated AlGaN/GaN high electron mobility transistors (HEMTs) to reference devices with silicon nitride passivation only. The NCD-coated HEMTs were observed to outperform reference devices in transconductance, large-signal gain, output power density, and power-added efficiency at 4 GHz. The measured improvements were suspected to be related to reduced dispersion and lower source access resistance afforded by the NCD film.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2345631