Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels

GaN trench-gate MOSFETs with m- and a-plane-oriented sidewall channels were fabricated and characterized. The trench-gate MOSFET performance depended strongly on the sidewall-MOS-channel plane orientation. The m-plane-oriented MOS channel devices demonstrated higher channel mobility, higher current...

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Bibliographic Details
Published inApplied physics express Vol. 9; no. 12; pp. 121001 - 121003
Main Authors Gupta, Chirag, Chan, Silvia H., Lund, Cory, Agarwal, Anchal, Koksaldi, Onur S., Liu, Junquian, Enatsu, Yuuki, Keller, Stacia, Mishra, Umesh K.
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.12.2016
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Summary:GaN trench-gate MOSFETs with m- and a-plane-oriented sidewall channels were fabricated and characterized. The trench-gate MOSFET performance depended strongly on the sidewall-MOS-channel plane orientation. The m-plane-oriented MOS channel devices demonstrated higher channel mobility, higher current density, lower sub-threshold slope, and lower hysteresis with similar threshold voltage and on-off ratio compared to a-plane MOS channel devices. These results indicate that orienting trench-gate MOSFET toward the m-plane would allow for better on-state characteristics while maintaining similar off-state characteristics.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.121001