Nonlinear Absorption at Optical Telecommunication Wavelengths of InN Films Deposited by RF Sputtering

We report on the nonlinear optical absorption of InN films deposited on GaN templates by radio-frequency (RF) sputtering. The layers are characterized through the pump-probe technique at 1.55 μm, by obtaining a nonlinear absorption coefficient of 167±30 cm/GW with a nonlinear response recovery time...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 24; no. 22; pp. 1998 - 2000
Main Authors Valdueza-Felip, S., Monteagudo-Lerma, L., Mangeney, J., Gonzalez-Herraez, M., Julien, F. H., Naranjo, F. B.
Format Journal Article
LanguageEnglish
Published IEEE 15.11.2012
Subjects
Absorption
Indium nitride
nonlinear absorption
nonlinear optical devices
Nonlinear optics
Optical films
Optical pumping
Optical reflection
pump-probe
sputtering
Ultrafast optics
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Summary:We report on the nonlinear optical absorption of InN films deposited on GaN templates by radio-frequency (RF) sputtering. The layers are characterized through the pump-probe technique at 1.55 μm, by obtaining a nonlinear absorption coefficient of 167±30 cm/GW with a nonlinear response recovery time of 380 fs. This nonlinear behavior is attributed to a two-photon absorption process followed by a free carrier absorption by the photogenerated carriers. These results render InN films deposited by RF sputtering particularly suitable for ultrafast all-optical devices based on low-cost technology.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2217484