Monte Carlo Simulation of Photoelectric Characteristics of Mercury-Cadmium-Tellurium- Based Infrared Focal-Plane-Array Detectors

A mathematical model was developed to enable the Monte Carlo analysis of the charge-carrier diffusion process in the absorber layer of mercury-cadmium-tellurium (MCT) photovoltaic infrared focal-plane-array (IR FPA) detectors. Using this model, the distribution of local internal quantum efficiency &...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 65; no. 11; pp. 4924 - 4930
Main Authors Polovinkin, Vladimir G., Stuchinsky, Victor A., Vishnyakov, Aleksey V., Lee, Irlam I.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Charge carriers
Detectors
Infrared (IR) focal-plane-array (FPA) detectors
Mathematical model
mercury–cadmium–tellurium (MCT)
Monte Carlo calculation
Monte Carlo methods
Photodiodes
quantum efficiency of FPA elements
Semiconductor diodes
Sensitivity
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Summary:A mathematical model was developed to enable the Monte Carlo analysis of the charge-carrier diffusion process in the absorber layer of mercury-cadmium-tellurium (MCT) photovoltaic infrared focal-plane-array (IR FPA) detectors. Using this model, the distribution of local internal quantum efficiency <inline-formula> <tex-math notation="LaTeX">\eta </tex-math></inline-formula> of FPA elements over the FPA area was calculated. Afterward, the integral quantum efficiency of arbitrarily illuminated FPAs was determined via convolution of the obtained distribution of <inline-formula> <tex-math notation="LaTeX">\eta </tex-math></inline-formula> with illumination intensity. Following such calculations, some requirements to photoelectric properties of MCT material, and some suggestions on design optimization of FPA elements, allowing one to improve the sensitivity and spatial resolution of IR FPA detectors, were formulated.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2872129