Repetitive-Avalanche-Induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode

The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been de...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 62; no. 2; pp. 601 - 605
Main Authors Liu, Siyang, Yang, Chao, Sun, Weifeng, Qian, Qingsong, Huang, Yu, Wu, Xing, Wu, Minjun, Yang, Qingling, Sun, Litao
Format Journal Article
LanguageEnglish
Published IEEE 01.02.2015
Subjects
4H-SiC
Charge carrier processes
Dielectrics
junction barrier Schottky (JBS) diode
parameters shift
Reliability
repetitive avalanche
Schottky diodes
Silicon carbide
Stress
parameters shift
junction barrier Schottky (JBS) diode
4H-SiC
repetitive avalanche
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Summary:The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been demonstrated that the forward voltage drop of the device has no variation during the stress due to the intactness of active area. However, the reverse breakdown voltage is gradually increased with the stress time, which results from hot electron injection and trapping into the SiO2 dielectric at the outer edge of p-type junction termination.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2375821