Repetitive-Avalanche-Induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode
The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been de...
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Published in | IEEE transactions on electron devices Vol. 62; no. 2; pp. 601 - 605 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.02.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been demonstrated that the forward voltage drop of the device has no variation during the stress due to the intactness of active area. However, the reverse breakdown voltage is gradually increased with the stress time, which results from hot electron injection and trapping into the SiO2 dielectric at the outer edge of p-type junction termination. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2014.2375821 |