Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate

In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found th...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics technology letters Vol. 24; no. 6; pp. 488 - 490
Main Authors Fu, Yi-Keng, Lu, Yu-Hsuan, Xuan, Rong, Chao, Chia-Hsin, Su, Yan-Kuin, Chen, Jenn-Fang
Format Journal Article
LanguageEnglish
Published IEEE 15.03.2012
Subjects
Chemical wet-etching
Chemicals
Etching
Gallium nitride
GaN
Light emitting diodes
light extraction
near-ultraviolet light-emitting diode (NUV LED)
Quantum well devices
simulation
Substrates
Online AccessGet full text

Cover

More Information
Summary:In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found that the increased etching time can increase the height of hexagonal pyramids and decrease the density of hexagonal pyramids. With 20-mA injection current, it was found that forward voltages were 3.13 and 3.16 V while output powers were 13.15 and 27.18 mW for the conventional LED and roughened backside LED, respectively.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2182606